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| Transys Electronics LIMITED TO-126C Plastic-Encapsulated Transistors 2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER 2. COLLECTOR 3. BASE Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 VCE=5V, IC=150mA VCE=5V, IC=500mA IC=500mA, IB=50mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz 180 120 5 10 10 60 30 1 1.5 140 14 320 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100-200 D 160-320 Typical Characteristics 2SD669 |
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